2n3906 Datasheet Pdf

2N3906/D 2N3906 General Purpose Transistors. Dimensions section on page 3 of this data sheet. ORDERING INFORMATION MARKING DIAGRAM 2N 3906 ALYW A = Assembly Location L = Wafer Lot Y = Year W = Work Week = Pb−Free Package (Note: Microdot may be in either location) 1 2 3 1 BENT LEAD TAPE & REEL AMMO PACK. 2n3906 mmbt3906 pzt3906.pdf Size:106K fairchildsemi 2N3906 MMBT3906 PZT3906 C C E E C C TO-92 B B B E SOT-223 SOT-23 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. 2n3906 small signal pnp transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the npn complementary type is 2n3904 applications well suitable for tv and home appliance equipment. 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier. MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR. 2N3904 MMBT3904 PZT3904 - NPN. 2N3906 / MMBT3906 / PZT3906 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. 2N3906 datasheet, 2N3906 pdf, 2N3906 data sheet, datasheet, data sheet, pdf.

N3906 Transistor
2n3906 Datasheet Pdf Download
2n3906 Transistor Datasheet
2n3906 Datasheet General Purpose
2n3906 Transistor Datasheet Pdf

Type Designator: 2N3904

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.31 W

Maximum Collector-Base Voltage Vcb : 60 V

Maximum Collector-Emitter Voltage Vce : 40 V

Maximum Emitter-Base Voltage Veb : 6 V

Maximum Collector Current Ic max : 0.2 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

2N3904 Transistor Equivalent Substitute - Cross-Reference Search

2N3904 Datasheet (PDF)

1.1. 2n3904g.pdf Size:398K _upd

SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

1.2. 2n3904-t18.pdf Size:86K _upd

2N3904-T18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR FEATURES • SILICON NPN EPITAXIAL TRANSISTOR 0.48 (0.019) • HERMETIC TO18 PACKAGE 0.41 (0.016) dia. • HI-REL SCREENING OPTIONS AVAILABLE • HIGH SPEED SATURATED SWITCHING 2.54 (0.100) Nom. APPLICATIONS A h

1.3. 2n3904n.pdf Size:186K _upd

2N3904N Semiconductor Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage : VCE(sat)=0.3V(MAX.) @ IC=50mA, IB=5mA • Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz • Complementary pair with STA3906A Ordering Information Type NO. Mark

1.4. 2n3904sc.pdf Size:699K _upd

SEMICONDUCTOR 2N3904SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ·Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. ·Excellent DC Current Gain Linearity. ·Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. ·Complementary to 2N3906SC. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMB

1.5. 2n3903 2n3904.pdf Size:212K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3903/D General Purpose Transistors 2N3903 NPN Silicon * 2N3904 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol Value Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc C

1.6. 2n3904 3.pdf Size:51K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jul 15 Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current (max. 200 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter • High-speed switch

1.7. 2n3904.pdf Size:60K _st

2N3904 ® SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS 2N3906 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT S

1.8. 2n3904 mmbt3904 pzt3904.pdf Size:111K _fairchild_semi

2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V

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1.9. 2n3904.pdf Size:169K _fairchild_semi

October 2011 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier Features • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 PZT3904 MMBT3904 C C E E C B TO-92 SOT-23 SOT-223 B Mark:1A EBC Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Param

1.10. 2n3903 2n3904.pdf Size:66K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.11. 2n3904(to-92).pdf Size:260K _mcc

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3904 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ('P' Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Amplifi

1.12. 2n3903 2n3904.pdf Size:177K _onsemi

2N3903, 2N3904 General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 Collector-Base Voltage VCBO 60 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation PD @ TA = 25°C 625

1.13. 2n3904.pdf Size:214K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3904L-T92-B 2N3904G-T92-B TO-92 E B C Tape Box 2N3904L-T92-K 2N3904G-

1.14. 2n3904.pdf Size:162K _auk

2N3904 NPN Silicon Transistor Descriptions PIN Connection • General small signal application C • Switching application Features B • Low collector saturation voltage • Collector output capacitance E • Complementary pair with 2N3906 TO-92 Ordering Information Type NO. Marking Package Code 2N3904 2N3904 TO-92 Absolute maximum ratings Ta=25°C Characteri

1.15. 2n3904.pdf Size:378K _secos

2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25°C) G H 1Emitter 1 1 1 Collector Current ICM: 200mA 2Base 2 2 2 Collector – Base Voltage V(BR)CBO: 60V 3Collector 3 3 3 J A D CLASSIFICATION OF hFE(1) Milli

1.16. 2n3904v.pdf Size:92K _kec

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SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ : ICEX=50nA(Max.), IBL=50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=30V, VEB=3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 0.05

1.17. 2n3904e.pdf Size:91K _kec

SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=30V, VEB=3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity. H

1.18. 2n3904c.pdf Size:73K _kec

SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.3V(Ma

1.19. 2n3904s.pdf Size:410K _kec

SEMICONDUCTOR 2N3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 @VCE=30V, VEB=3V. 1 G 1.90 H 0.95 Excellent DC Current Gain Linearity. J 0.13+0.1

1.20. 2n3904.pdf Size:51K _kec

SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.3V(Max.)

1.21. 2n3904u.pdf Size:51K _kec

SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=30V, VEB=3V. G 0.65 Excellent DC Current Gain Linearity. H 0.15+0

1.22. 2n3904a.pdf Size:657K _kec

SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. F 1.27 G 0.85 Low Collector Outp

1.23. 2n3904.pdf Size:307K _lge

2N3904(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25? unless otherwise noted)

1.24. 2n3904.pdf Size:612K _wietron

2N3904 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 200 mAdc PD 625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperatur

1.25. h2n3904.pdf Size:50K _hsmc

Spec. No. : HE6218 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2005.01.14 MICROELECTRONICS CORP. Page No. : 1/5 H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N3904 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................

1.26. 2n3904 to92.pdf Size:398K _first_silicon

1.27. 2n3904s.pdf Size:227K _first_silicon

SEMICONDUCTOR 2N3904S TECHNICAL DATA General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping 3 2N3904S 1AM 3000/Tape & Reel 2 1 MAXIMUM RATINGS SOT–23 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc 3 COLLECTOR Emitter–Base Vo

1.28. 2n3904u.pdf Size:201K _first_silicon

SEMICONDUCTOR 2N3904U TECHNICAL DATA General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Marking Shipping AM 2N3904U 3000/Tape & Reel 1 2 SC-70 / SOT– 323 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc 3 COLLECTOR Collector–Base Voltage VCBO 60 Vdc 1 Emi

1.29. 2n3904.pdf Size:383K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 Lead-free: 2N3904L Halogen-free:2N3904G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Fre

Datasheet: 2N389A-1, 2N38A, 2N39, 2N3900, 2N3900A, 2N3901, 2N3902, 2N3903, A1015, 2N3904CSM, 2N3904DCSM, 2N3905, 2N3905CSM, 2N3906, 2N3906CSM, 2N3907, 2N3908.

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BJT: 2SA1897 KRC664E KRC663E SMUN5335DW MP1526 3DD5287 E3150 3DD2499 3DD4212DT 2SC9014 US6H23 UMH9NFHA UMH8NFHA UMH6NFHA UMH5NFHA UMH4NFHA UMH3NFHA UMH33N UMH32N UMH2NFHA

2N3906 transistors in plastic TO-92 packaging. The cases are marked with E, B, and C for lead identification.

Photomicrograph of the transistor chip inside a 2N3906 transistor package, showing the conductive metal layers used to connect the semiconductor junctions to the package leads. The upper-left and lower-right quadrants are bonding pad areas where wires for two of the terminals are attached, and the other two quadrants have the actual transistor structures, in a bulk region that is contacted at the back side of the chip to the third terminal.

The 2N3906 is a commonly used PNPbipolar junction transistor intended for general purpose low-power amplifying or switching applications.^[1]^[2]^[3] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds.

Overview[edit]

The 2N3906 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.

The 2N3906 is specified by a collector current of 200 mA, collector-base and collector-emitter voltages of 40 V, for power dissipation of 300 mW. Its transition frequency F_t is 250 MHz, with a beta of at least 100.^[1]

The complementary NPN transistor to the 2N3906 is the 2N3904.^[4] Both types were registered by Motorola Semiconductor in the mid-1960s.

Part numbers[edit]

The 2N3904 (NPN) and 2N3906 (PNP) are complementary transistor pairs. These transistors are available in package styles TO-92, SOT23, SOT223 with different prefixes.

Transistor part numbers
BJT	Thru-hole	Surface-mount
BJT	TO92	SOT23	SOT223
NPN	2N3904^[4]	MMBT3904	PZT3904
PNP	2N3906^[1]	MMBT3906	PZT3906

References[edit]

N3906 Transistor

^ ^a^b^c'2N3906 Datasheet (TO-92)'(PDF). ON Semiconductor. February 2010. Archived(PDF) from the original on August 8, 2019.
^'2N3906 Datasheet (TO-92)'(PDF). Micro Commercial Components (MCC). January 2013. Archived(PDF) from the original on August 8, 2019.
^'2N3906 Datasheet (TO-92)'(PDF). Jiangsu Changjiang Electronics Technology (JCET). October 2017. Archived(PDF) from the original on August 8, 2019.
^ ^a^b'2N3904 Datasheet (TO-92)'(PDF). ON Semiconductor. August 2012. Archived(PDF) from the original on August 8, 2019.